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AM1214-175
.REFRACTORY/ .EMI .3: .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE = 160 W MIN. WITH 7.3 dB GAIN OUT
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-175 BRANDING 1214-175
PIN CONNECTION
The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
330 14 45 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.45 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM1214-175
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES hFE
IC = 60mA IE = 10mA IC = 100mA VCE = 40V VCE = 5V
IE = 0mA IC = 0mA
65 3.5 65 --
-- -- -- -- --
-- -- -- 25 150
V V V mA --
IC = 5A
15
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP
Note:
f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
150S 5%
PIN = 30W PIN = 30W PIN = 30W
VCC = 40V VCC = 40V VCC = 40V
160 45 7.3
180 50 7.8
-- -- --
W % dB
Pul se Widt h Duty Cycle
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AM1214-175
TYPICAL PERFORMANCE RELATIVE POWER OUTPUT AND COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
TYPICAL BROADBAND POWER AMPLIFIER
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
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AM1214-175
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
Z IN
PIN = 30 W VCC = 40 V Z0* = 50 ohms
FREQ. L = 1215 MHz M = 1300 MHz H = 1400 MHz
ZIN () 4.0 + j 3.5 2.0 + j 3.0 1.5 + j 4.0
ZCL () 2.0 - j 2.5 2.0 - j 1.5 1.5 - j 2.5
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
PIN = 30 W VCC = 40 V Z 0* = 50 ohms
*Normalized Impedance
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AM1214-175
TEST CIRCUIT
Ref. Dwg. No.: 104-001280
PACKAGE MECHANICAL DATA
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AM1214-175
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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